English: The image illustrates the LOCOS technology used in microfabrication mostly to create isolating structures.

I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, nitride mask IV. Etching of nitride layer and silicon oxide layer V. Thermal growth of silicon oxide VI. Furhter growth of thermal silicon oxide VII. Removal of nitride mask

1) Si, silicon substrate 2) SiO2, pad/buffer oxide, chemical vapor deposition silicon oxide 3) Si3N4, nitride mask

4) SiO2, isolation oxide, thermal oxide